Chamber with flow-through source

ABSTRACT

Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

TECHNICAL FIELD

The present technology relates to semiconductor systems, processes, andequipment. More specifically, the present technology relates toprocessing chambers that may include an inductively coupled plasmasource within the chamber.

BACKGROUND

Integrated circuits are made possible by processes which produceintricately patterned material layers on substrate surfaces. Producingpatterned material on a substrate requires controlled methods forremoval of exposed material. Chemical etching is used for a variety ofpurposes including transferring a pattern in photoresist into underlyinglayers, thinning layers, or thinning lateral dimensions of featuresalready present on the surface. Often it is desirable to have an etchprocess that etches one material faster than another facilitating, forexample, a pattern transfer process. Such an etch process is said to beselective to the first material. As a result of the diversity ofmaterials, circuits, and processes, etch processes have been developedwith a selectivity towards a variety of materials.

Etch processes may be termed wet or dry based on the materials used inthe process. A wet HF etch preferentially removes silicon oxide overother dielectrics and materials. However, wet processes may havedifficulty penetrating some constrained trenches and also may sometimesdeform the remaining material. Dry etches produced in local plasmasformed within the substrate processing region can penetrate moreconstrained trenches and exhibit less deformation of delicate remainingstructures. However, local plasmas may damage the substrate through theproduction of electric arcs as they discharge.

Thus, there is a need for improved systems and methods that can be usedto produce high quality devices and structures. These and other needsare addressed by the present technology.

SUMMARY

Semiconductor processing systems and methods of the present technologymay include semiconductor processing chambers including a chamberhousing at least partially defining an interior region of asemiconductor processing chamber. The chamber may include a showerheadpositioned within the chamber housing, and the showerhead may at leastpartially divide the interior region into a remote region and aprocessing region in which a substrate can be contained. The chamber mayalso include an inductively coupled plasma source positioned between theshowerhead and the processing region. The inductively coupled plasmasource may include a conductive material within a dielectric material.

In embodiments the dielectric material may be selected from the groupconsisting of aluminum oxide, yttrium oxide, single crystalline silicon,and quartz. Additionally, the conductive material may include a coppertube configured to receive a fluid flowed within the tube. Thedielectric material may define apertures through the inductively coupledplasma source. In some embodiments the conductive material may bepositioned about the apertures within the dielectric material. Theapertures may be included in a uniform pattern across the dielectricmaterial and about the conductive material. In some embodiments, theconductive material may be configured in a planar spiral pattern withinthe dielectric material. In other embodiments the conductive materialmay configured in a coil extending vertically within the dielectricmaterial for at least two complete turns of the conductive material.

In exemplary plasma sources, the conductive material may include twoconductive tubes positioned within the inductively coupled source. Afirst tube may be included in a first configuration within theinductively coupled source, and a second tube may be included in asecond configuration within the inductively coupled source. In someembodiments the second configuration may be radially inward of the firstconfiguration. The first configuration and the second configuration mayeach be coiled configurations extending vertically within the dielectricmaterial. In other embodiments, the first configuration and the secondconfiguration may each be a planar configuration within the same planeof the inductively coupled source. The first tube and the second tubemay be coupled with an RF source, and in some embodiments the first tubeand the second tube may each be coupled with the RF source through acapacitive divider. Additionally, in some embodiments the inductivelycoupled source may include at least two plates coupled together. Eachplate of the at least two plates may define at least a portion of achannel, and the conductive material may be housed within the channel atleast partially defined by each of the at least two plates.

The present technology also encompasses inductively coupled plasmasources. Exemplary sources may include a first plate defining at least aportion of a channel within the first plate. The first plate may includea dielectric material, for example. Exemplary sources may also include aconductive material seated within the at least a portion of the channel.In some embodiments the conductive material may be characterized by aspiral or coil configuration. Additionally, the conductive material maybe coupled with an RF source and configured to generate a plasma acrossthe source.

In some exemplary sources the first plate may define apertures throughthe first plate, and a central axis of each aperture may be normal tothe at least a portion of the channel. In embodiments the source may becharacterized by a thickness of at least three inches. The first platemay define at least a portion of the first channel and at least aportion of a second channel in embodiments. The conductive material mayinclude at least a first conductive material seated within the at leasta portion of the first channel and a second conductive material seatedwithin the at least a portion of the second channel. Exemplary sourcesmay further include a second plate coupled with the first plateenclosing the conductive material between the first plate and the secondplate. In embodiments the second plate may define second aperturesaxially aligned with the apertures defined through the first plate.

The present technology additionally includes semiconductor processingchambers. Exemplary chambers may include a chamber housing at leastpartially defining an interior region of the semiconductor processingchamber. The chamber housing may include a lid assembly including aninlet for receiving precursors into the semiconductor processingchamber. The chambers may also include a pedestal within the interiorregion of the semiconductor processing chamber. The chambers may includea showerhead positioned within the chamber housing. In embodiments, theshowerhead may be positioned between the lid assembly and the pedestal.Additionally, the chambers may include an inductively coupled plasmasource positioned between the showerhead and the pedestal. Theinductively coupled plasma source may include a conductive materialwithin a dielectric material.

Such technology may provide numerous benefits over conventional systemsand techniques. For example, inductive sources according to the presenttechnology may reduce component sputtering from the electrodes.Additionally, plasma sources of the present technology may allowdecoupling of plasma ion energy from ion density. These and otherembodiments, along with many of their advantages and features, aredescribed in more detail in conjunction with the below description andattached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosedtechnology may be realized by reference to the remaining portions of thespecification and the drawings.

FIG. 1 shows a top plan view of an exemplary processing system accordingto embodiments of the present technology.

FIG. 2 shows a schematic cross-sectional view of an exemplary processingchamber according to embodiments of the present technology.

FIG. 3 shows a bottom plan view of an exemplary showerhead according toembodiments of the disclosed technology.

FIG. 4 shows a plan view of an exemplary faceplate according toembodiments of the disclosed technology.

FIG. 5 shows a cross-sectional view of a processing chamber according toembodiments of the present technology.

FIG. 6 shows a plan view of an exemplary plasma source according toembodiments of the present technology.

FIG. 7 shows a cross-sectional view of the exemplary plasma source ofFIG. 6 according to embodiments of the present technology.

FIG. 8 shows a plan view of an exemplary plasma source according toembodiments of the present technology.

FIG. 9 shows a plan view of an exemplary plasma source according toembodiments of the present technology.

FIG. 10 shows a cross-sectional view of a processing chamber accordingto embodiments of the present technology.

FIG. 11 shows a plan view of an exemplary plasma source according toembodiments of the present technology.

FIG. 12 shows a cross-sectional view of the exemplary plasma source ofFIG. 11 according to embodiments of the present technology.

FIG. 13 shows operations of an exemplary method according to embodimentsof the present technology.

Several of the figures are included as schematics. It is to beunderstood that the figures are for illustrative purposes, and are notto be considered of scale unless specifically stated to be of scale.Additionally, as schematics, the figures are provided to aidcomprehension and may not include all aspects or information compared torealistic representations, and may include additional or exaggeratedmaterial for illustrative purposes.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a letter thatdistinguishes among the similar components. If only the first referencelabel is used in the specification, the description is applicable to anyone of the similar components having the same first reference labelirrespective of the letter.

DETAILED DESCRIPTION

The present technology includes systems and components for semiconductorprocessing including tuned etch processes. Certain processing chambersavailable may include multiple plasma mechanisms, such as one at thewafer level as well as a remote plasma source. Plasma at the wafer levelmay often be formed via a capacitively-coupled plasma formed between twoelectrodes. One or both of these electrodes may be or include additionalchamber components, such as showerheads, pedestals, or chamber walls.However, even at relatively low level plasma power and chamberpressures, such as 50 W power at 20 mTorr, the induced voltage on theelectrodes may be hundreds of volts. This may cause sputtering of theelectrodes themselves, which may introduce the sputtered particulatematerial onto the wafer. These particulates may fail to allow uniformityacross the wafer, and may deposit conductive material that can causeshort circuiting of the finally produced circuit.

Conventional technologies may have addressed this sputtering issue byseasoning the chamber components with a polymer coating, such as acarbon-containing coating or a silicon-containing coating. Such apolymer layer may operate as a passivation layer on the surfaces of thecapacitively-coupled source electrodes. However, such a coating may bedifficult to apply uniformly to a showerhead or component, may not havecomplete coverage, and may still be degraded over time leading to thepolymeric material being deposited on the wafer.

The present technology may overcome these issues by utilizing aninductively-coupled plasma (“ICP”) source within the chamber itself. TheICP source may produce voltages much lower than a capacitively-coupledplasma source of the same power, which may at least partially resolveelectrode sputtering. Additionally, because the ICP source operatesdifferently from the two plates of the capacitively-coupled source,plasma ion density and ion energy may be decoupled in exemplary chambersaccording to the present technology. This may allow improved plasmatuning and feature modification over conventional technologies.

Although the remaining disclosure will routinely identify specificetching processes utilizing the disclosed technology, it will be readilyunderstood that the systems and methods are equally applicable todeposition and cleaning processes as may occur in the describedchambers. Accordingly, the technology should not be considered to be solimited as for use with etching processes alone.

FIG. 1 shows a top plan view of one embodiment of a processing system100 of deposition, etching, baking, and curing chambers according toembodiments. The processing tool 100 depicted in FIG. 1 may contain aplurality of process chambers, 114A-D, a transfer chamber 110, a servicechamber 116, an integrated metrology chamber 117, and a pair of loadlock chambers 106A-B. The process chambers may include structures orcomponents similar to those described in relation to FIG. 2, as well asadditional processing chambers.

To transport substrates among the chambers, the transfer chamber 110 maycontain a robotic transport mechanism 113. The transport mechanism 113may have a pair of substrate transport blades 113A attached to thedistal ends of extendible arms 113B, respectively. The blades 113A maybe used for carrying individual substrates to and from the processchambers. In operation, one of the substrate transport blades such asblade 113A of the transport mechanism 113 may retrieve a substrate Wfrom one of the load lock chambers such as chambers 106A-B and carrysubstrate W to a first stage of processing, for example, an etchingprocess as described below in chambers 114A-D. If the chamber isoccupied, the robot may wait until the processing is complete and thenremove the processed substrate from the chamber with one blade 113A andmay insert a new substrate with a second blade (not shown). Once thesubstrate is processed, it may then be moved to a second stage ofprocessing. For each move, the transport mechanism 113 generally mayhave one blade carrying a substrate and one blade empty to execute asubstrate exchange. The transport mechanism 113 may wait at each chamberuntil an exchange can be accomplished.

Once processing is complete within the process chambers, the transportmechanism 113 may move the substrate W from the last process chamber andtransport the substrate W to a cassette within the load lock chambers106A-B. From the load lock chambers 106A-B, the substrate may move intoa factory interface 104. The factory interface 104 generally may operateto transfer substrates between pod loaders 105A-D in an atmosphericpressure clean environment and the load lock chambers 106A-B. The cleanenvironment in factory interface 104 may be generally provided throughair filtration processes, such as HEPA filtration, for example. Factoryinterface 104 may also include a substrate orienter/aligner (not shown)that may be used to properly align the substrates prior to processing.At least one substrate robot, such as robots 108A-B, may be positionedin factory interface 104 to transport substrates between variouspositions/locations within factory interface 104 and to other locationsin communication therewith. Robots 108A-B may be configured to travelalong a track system within enclosure 104 from a first end to a secondend of the factory interface 104.

The processing system 100 may further include an integrated metrologychamber 117 to provide control signals, which may provide adaptivecontrol over any of the processes being performed in the processingchambers. The integrated metrology chamber 117 may include any of avariety of metrological devices to measure various film properties, suchas thickness, roughness, composition, and the metrology devices mayfurther be capable of characterizing grating parameters such as criticaldimensions, sidewall angle, and feature height under vacuum in anautomated manner.

Turning now to FIG. 2 is shown a cross-sectional view of an exemplaryprocess chamber system 200 according to the present technology. Chamber200 may be used, for example, in one or more of the processing chambersections 114 of the system 100 previously discussed. Generally, the etchchamber 200 may include a first capacitively-coupled plasma source toimplement an ion milling operation and a second capacitively-coupledplasma source to implement an etching operation and to implement anoptional deposition operation. In embodiments explained further below,the chamber may further include an inductively-coupled plasma source toperform additional ion etching operations. The chamber 200 may includegrounded chamber walls 240 surrounding a chuck 250. In embodiments, thechuck 250 may be an electrostatic chuck that clamps the substrate 202 toa top surface of the chuck 250 during processing, though other clampingmechanisms as would be known may also be utilized. The chuck 250 mayinclude an embedded heat exchanger coil 217. In the exemplaryembodiment, the heat exchanger coil 217 includes one or more heattransfer fluid channels through which heat transfer fluid, such as anethylene glycol/water mix, may be passed to control the temperature ofthe chuck 250 and ultimately the temperature of the substrate 202.

The chuck 250 may include a mesh 249 coupled to a high voltage DC supply248 so that the mesh 249 may carry a DC bias potential to implement theelectrostatic clamping of the substrate 202. The chuck 250 may becoupled with a first RF power source and in one such embodiment, themesh 249 may be coupled with the first RF power source so that both theDC voltage offset and the RF voltage potentials are coupled across athin dielectric layer on the top surface of the chuck 250. In theillustrative embodiment, the first RF power source may include a firstand second RF generator 252, 253. The RF generators 252, 253 may operateat any industrially utilized frequency, however in the exemplaryembodiment the RF generator 252 may operate at 60 MHz to provideadvantageous directionality. Where a second RF generator 253 is alsoprovided, the exemplary frequency may be 2 MHz.

With the chuck 250 to be RF powered, an RF return path may be providedby a first showerhead 225, which may include a dual channel showerhead.The first showerhead 225 may be disposed above the chuck to distribute afirst feed gas into a first chamber region 284 defined by the firstshowerhead 225 and the chamber wall 240. As such, the chuck 250 and thefirst showerhead 225 form a first RF coupled electrode pair tocapacitively energize a first plasma 270 of a first feed gas within afirst chamber region 284. A DC plasma bias, or RF bias, resulting fromcapacitive coupling of the RF powered chuck may generate an ion fluxfrom the first plasma 270 to the substrate 202, e.g., Ar ions where thefirst feed gas is Ar, to provide an ion milling plasma. The firstshowerhead 225 may be grounded or alternately coupled with an RF source228 having one or more generators operable at a frequency other thanthat of the chuck 250, e.g., 13.56 MHz or 60 MHz. In the illustratedembodiment the first showerhead 225 may be selectably coupled to groundor the RF source 228 through the relay 227 which may be automaticallycontrolled during the etch process, for example by a controller (notshown). In disclosed embodiments, chamber 200 may not include showerhead225 or dielectric spacer 220, and may instead include only baffle 215and showerhead 210 described further below.

As further illustrated in the figure, the etch chamber 200 may include apump stack capable of high throughput at low process pressures. Inembodiments, at least one turbo molecular pump 265, 266 may be coupledwith the first chamber region 284 through one or more gate valves 260and disposed below the chuck 250, opposite the first showerhead 225. Theturbo molecular pumps 265, 266 may be any commercially available pumpshaving suitable throughput and more particularly may be sizedappropriately to maintain process pressures below or about 10 mTorr orbelow or about 5 mTorr at the desired flow rate of the first feed gas,e.g., 50 to 500 sccm of Ar where argon is the first feedgas. In theembodiment illustrated, the chuck 250 may form part of a pedestal whichis centered between the two turbo pumps 265 and 266, however inalternate configurations chuck 250 may be on a pedestal cantileveredfrom the chamber wall 240 with a single turbo molecular pump having acenter aligned with a center of the chuck 250.

Disposed above the first showerhead 225 may be a second showerhead 210.In one embodiment, during processing, the first feed gas source, forexample, Argon delivered from gas distribution system 290 may be coupledwith a gas inlet 276, and the first feed gas flowed through a pluralityof apertures 280 extending through second showerhead 210, into thesecond chamber region 281, and through a plurality of apertures 282extending through the first showerhead 225 into the first chamber region284. An additional flow distributor or baffle 215 having apertures 278may further distribute a first feed gas flow 216 across the diameter ofthe etch chamber 200 through a distribution region 218. In an alternateembodiment, the first feed gas may be flowed directly into the firstchamber region 284 via apertures 283 which are isolated from the secondchamber region 281 as denoted by dashed line 223.

Chamber 200 may additionally be reconfigured from the state illustratedto perform an etching operation. A secondary electrode 205 may bedisposed above the first showerhead 225 with a second chamber region 281there between. The secondary electrode 205 may further form a lid or topplate of the etch chamber 200. The secondary electrode 205 and the firstshowerhead 225 may be electrically isolated by a dielectric ring 220 andform a second RF coupled electrode pair to capacitively discharge asecond plasma 292 of a second feed gas within the second chamber region281. Advantageously, the second plasma 292 may not provide a significantRF bias potential on the chuck 250. At least one electrode of the secondRF coupled electrode pair may be coupled with an RF source forenergizing an etching plasma. The secondary electrode 205 may beelectrically coupled with the second showerhead 210. In an exemplaryembodiment, the first showerhead 225 may be coupled with a ground planeor floating and may be coupled to ground through a relay 227 allowingthe first showerhead 225 to also be powered by the RF power source 228during the ion milling mode of operation. Where the first showerhead 225is grounded, an RF power source 208, having one or more RF generatorsoperating at 13.56 MHz or 60 MHz, for example, may be coupled with thesecondary electrode 205 through a relay 207 which may allow thesecondary electrode 205 to also be grounded during other operationalmodes, such as during an ion milling operation, although the secondaryelectrode 205 may also be left floating if the first showerhead 225 ispowered.

A second feed gas source, such as nitrogen trifluoride, and a hydrogensource, such as ammonia, may be delivered from gas distribution system290, and coupled with the gas inlet 276 such as via dashed line 224. Inthis mode, the second feed gas may flow through the second showerhead210 and may be energized in the second chamber region 281. Reactivespecies may then pass into the first chamber region 284 to react withthe substrate 202. As further illustrated, for embodiments where thefirst showerhead 225 is a multi-channel showerhead, one or more feedgases may be provided to react with the reactive species generated bythe second plasma 292. In one such embodiment, a water source may becoupled with the plurality of apertures 283. Additional configurationsmay also be based on the general illustration provided, but with variouscomponents reconfigured. For example, flow distributor or baffle 215 maybe a plate similar to the second showerhead 210, and may be positionedbetween the secondary electrode 205 and the second showerhead 210.

As any of these plates may operate as an electrode in variousconfigurations for producing plasma, one or more annular or other shapedspacer may be positioned between one or more of these components,similar to dielectric ring 220. Second showerhead 210 may also operateas an ion suppression plate in embodiments, and may be configured toreduce, limit, or suppress the flow of ionic species through the secondshowerhead 210, while still allowing the flow of neutral and radicalspecies. One or more additional showerheads or distributors may beincluded in the chamber between first showerhead 225 and chuck 250. Sucha showerhead may take the shape or structure of any of the distributionplates or structures previously described. Also, in embodiments a remoteplasma unit (not shown) may be coupled with the gas inlet to provideplasma effluents to the chamber for use in various processes.

In an embodiment, the chuck 250 may be movable along the distance H2 ina direction normal to the first showerhead 225. The chuck 250 may be onan actuated mechanism surrounded by a bellows 255, or the like, to allowthe chuck 250 to move closer to or farther from the first showerhead 225as a means of controlling heat transfer between the chuck 250 and thefirst showerhead 225, which may be at an elevated temperature of 80°C.-150° C., or more. As such, an etch process may be implemented bymoving the chuck 250 between first and second predetermined positionsrelative to the first showerhead 225. Alternatively, the chuck 250 mayinclude a lifter 251 to elevate the substrate 202 off a top surface ofthe chuck 250 by distance H1 to control heating by the first showerhead225 during the etch process. In other embodiments, where the etchprocess is performed at a fixed temperature such as about 90-110° C. forexample, chuck displacement mechanisms may be avoided. A systemcontroller (not shown) may alternately energize the first and secondplasmas 270 and 292 during the etching process by alternately poweringthe first and second RF coupled electrode pairs automatically.

The chamber 200 may also be reconfigured to perform a depositionoperation. A plasma 292 may be generated in the second chamber region281 by an RF discharge which may be implemented in any of the mannersdescribed for the second plasma 292. Where the first showerhead 225 ispowered to generate the plasma 292 during a deposition, the firstshowerhead 225 may be isolated from a grounded chamber wall 240 by adielectric spacer 230 so as to be electrically floating relative to thechamber wall. In the exemplary embodiment, an oxidizer feed gas source,such as molecular oxygen, may be delivered from gas distribution system290, and coupled with the gas inlet 276. In embodiments where the firstshowerhead 225 is a multi-channel showerhead, any silicon-containingprecursor, such as OMCTS for example, may be delivered from gasdistribution system 290, and directed into the first chamber region 284to react with reactive species passing through the first showerhead 225from the plasma 292. Alternatively the silicon-containing precursor mayalso be flowed through the gas inlet 276 along with the oxidizer.Chamber 200 is included as a general chamber configuration that may beutilized for various operations discussed in reference to the presenttechnology.

FIG. 3 is a bottom view of a showerhead 325 for use with a processingchamber according to embodiments. Showerhead 325 may correspond withshowerhead 225 shown in FIG. 2. Through-holes 365, which may be a viewof first fluid channels or apertures 282, may have a plurality of shapesand configurations in order to control and affect the flow of precursorsthrough the showerhead 225. Small holes 375, which may be a view ofsecond fluid channels or apertures 283, may be distributed substantiallyevenly over the surface of the showerhead, even amongst thethrough-holes 365, and may provide more even mixing of the precursors asthey exit the showerhead than other configurations.

An arrangement for a faceplate according to embodiments is shown in FIG.4. As shown, the faceplate 400 may include a perforated plate ormanifold. The assembly of the faceplate may be similar to the showerheadas shown in FIG. 3, or may include a design configured specifically fordistribution patterns of precursor gases. Faceplate 400 may include anannular frame 410 positioned in various arrangements within an exemplaryprocessing chamber, such as the chamber as shown in FIG. 2. On or withinthe frame may be coupled a plate 420, which may be similar inembodiments to ion suppressor plate 523 as described below. Inembodiments faceplate 400 may be a single-piece design where the frame410 and plate 420 are a single piece of material.

The plate may have a disc shape and be seated on or within the frame410. The plate may be a conductive material such as a metal includingaluminum, as well as other conductive materials that allow the plate toserve as an electrode for use in a plasma arrangement as previouslydescribed. The plate may be of a variety of thicknesses, and may includea plurality of apertures 465 defined within the plate. An exemplaryarrangement as shown in FIG. 4 may include a pattern as previouslydescribed with reference to the arrangement in FIG. 3, and may include aseries of rings of apertures in a geometric pattern, such as a hexagonas shown. As would be understood, the pattern illustrated is exemplaryand it is to be understood that a variety of patterns, holearrangements, and hole spacing are encompassed in the design.

The apertures 465 may be sized or otherwise configured to allow fluidsto be flowed through the apertures during operation. The apertures maybe sized less than about 2 inches in various embodiments, and may beless than or about 1.5 inches, about 1 inch, about 0.9 inches, about 0.8inches, about 0.75 inches, about 0.7 inches, about 0.65 inches, about0.6 inches, about 0.55 inches, about 0.5 inches, about 0.45 inches,about 0.4 inches, about 0.35 inches, about 0.3 inches, about 0.25inches, about 0.2 inches, about 0.15 inches, about 0.1 inches, about0.05 inches, about 0.04 inches, about 0.035 inches, about 0.03 inches,about 0.025 inches, about 0.02 inches, about 0.015 inches, about 0.01inches, etc. or less.

In some embodiments faceplate 400 may operate as an ion suppressor thatdefines a plurality of apertures throughout the structure that areconfigured to suppress the migration of ionically-charged species out ofa chamber plasma region while allowing uncharged neutral or radicalspecies to pass through the ion suppressor into an activated gasdelivery region downstream of the ion suppressor. In embodiments, theion suppressor may be a perforated plate with a variety of apertureconfigurations. These uncharged species may include highly reactivespecies that are transported with less reactive carrier gas through theapertures. As noted above, the migration of ionic species through theholes may be reduced, and in some instances completely suppressed. Forexample, the aspect ratio of the holes, or the hole diameter to length,and/or the geometry of the holes may be controlled so that the flow ofionically-charged species in the activated gas passing through the ionsuppressor is reduced.

Turning to FIG. 5 is shown a simplified schematic of processing system500 according to the present technology. The chamber of system 500 mayinclude any of the components as previously discussed with relation toFIGS. 2-4, and may be configured to house a semiconductor substrate 555in a processing region 533 of the chamber. The chamber housing 503 mayat least partially define an interior region of the chamber. Forexample, the chamber housing 503 may include lid 502, and may at leastpartially include any of the other plates or components illustrated inthe figure. For example, the chamber components may be included as aseries of stacked components with each component at least partiallydefining a portion of chamber housing 503. The substrate 555 may belocated on a pedestal 565 as shown. Processing chamber 500 may include aremote plasma unit (not shown) coupled with inlet 501. In otherembodiments, the system may not include a remote plasma unit.

With or without a remote plasma unit, the system may be configured toreceive precursors or other fluids through inlet 501, which may provideaccess to a mixing region 511 of the processing chamber. The mixingregion 511 may be separate from and fluidly coupled with the processingregion 533 of the chamber. The mixing region 511 may be at leastpartially defined by a top of the chamber of system 500, such as chamberlid 502 or lid assembly, which may include an inlet assembly for one ormore precursors, and a distribution device, such as faceplate 509 below.Faceplate 509 may be similar to the showerhead or faceplate illustratedin FIG. 4 in disclosed embodiments. Faceplate 509 may include aplurality of channels or apertures 507 that may be positioned and/orshaped to affect the distribution and/or residence time of theprecursors in the mixing region 511 before proceeding through thechamber.

For example, recombination may be affected or controlled by adjustingthe number of apertures, size of the apertures, or configuration ofapertures across the faceplate 509. Spacer 504, such as a ring ofdielectric material may be positioned between the top of the chamber andthe faceplate 509 to further define the mixing region 511. Additionally,spacer 504 may be metallic to allow electrical coupling of lid 502 andfaceplate 509. Additionally, spacer 504 may not be included, and eitherlid 502 or faceplate 509 may be characterized by extensions or raisedfeatures to separate the two plates to define mixing region 511. Asillustrated, faceplate 509 may be positioned between the mixing region511 and the processing region 533 of the chamber, and the faceplate 509may be configured to distribute one or more precursors through thechamber 500.

The chamber of system 500 may include one or more of a series ofcomponents that may optionally be included in disclosed embodiments. Forexample although faceplate 509 is described, in some embodiments thechamber may not include such a faceplate. In disclosed embodiments, theprecursors that are at least partially mixed in mixing region 511 may bedirected through the chamber via one or more of the operating pressureof the system, the arrangement of the chamber components, or the flowprofile of the precursors.

An additional plate or device 523 may be disposed below the faceplate509. Plate 523 may include a similar design as faceplate 509, and mayhave a similar arrangement as is illustrated at FIG. 4, for example.Spacer 510 may be positioned between the faceplate 509 and plate 523,and may include a dielectric material, but may also include a conductivematerial allowing faceplate 509 and plate 523 to be electrically coupledin embodiments. Apertures 524 may be defined in plate 523, and may bedistributed and configured to affect the flow of ionic species throughthe plate 523. For example, the apertures 524 may be configured to atleast partially suppress the flow of ionic species directed toward theprocessing region 533, and may allow plate 523 to operate as an ionsuppressor as previously described. The apertures 524 may have a varietyof shapes including channels as previously discussed, and may include atapered portion extending outward away from the processing region 533 indisclosed embodiments.

The chamber of system 500 optionally may further include a gasdistribution assembly 525 within the chamber. The gas distributionassembly 525, which may be similar in aspects to the dual-channelshowerheads as previously described, may be located within the chamberabove the processing region 533, such as between the processing region533 and the lid 502. The gas distribution assembly 525 may be configuredto deliver both a first and a second precursor into the processingregion 533 of the chamber. In embodiments, the gas distribution assembly525 may at least partially divide the interior region of the chamberinto a remote region and a processing region in which substrate 555 ispositioned. Although the exemplary system of FIG. 5 includes adual-channel showerhead, it is understood that alternative distributionassemblies may be utilized that maintain a precursor fluidly isolatedfrom species introduced through inlet 501. For example, a perforatedplate and tubes underneath the plate may be utilized, although otherconfigurations may operate with reduced efficiency or not provide asuniform processing as the dual-channel showerhead as described. Byutilizing one of the disclosed designs, a precursor may be introducedinto the processing region 533 that is not previously excited by aplasma prior to entering the processing region 533, or may be introducedto avoid contacting an additional precursor with which it may react.Although not shown, an additional spacer may be positioned between theplate 523 and the showerhead 525, such as an annular spacer, to isolatethe plates from one another. In embodiments in which an additionalprecursor may not be included, the gas distribution assembly 525 mayhave a design similar to any of the previously described components, andmay include characteristics similar to the faceplate illustrated in FIG.4.

In embodiments, gas distribution assembly 525 may include an embeddedheater 529, which may include a resistive heater or a temperaturecontrolled fluid, for example. The gas distribution assembly 525 mayinclude an upper plate and a lower plate. The plates may be coupled withone another to define a volume 527 between the plates. The coupling ofthe plates may be such as to provide first fluid channels 540 throughthe upper and lower plates, and second fluid channels 545 through thelower plate. The formed channels may be configured to provide fluidaccess from the volume 527 through the lower plate, and the first fluidchannels 540 may be fluidly isolated from the volume 527 between theplates and the second fluid channels 545. The volume 527 may be fluidlyaccessible through a side of the gas distribution assembly 525, such aschannel 223 as previously discussed. The channel may be coupled with anaccess in the chamber separate from the inlet 501 of the chamber 500.The chamber of system 500 may also include a chamber liner 535, whichmay protect the walls of the chamber from plasma effluents as well asmaterial deposition, for example. The liner may be or may include aconductive material, and in embodiments may be or include an insulativematerial.

In some embodiments, a plasma as described earlier may be formed in aregion of the chamber defined between two or more of the componentspreviously discussed. For example, a plasma region such as a firstplasma region 515, may be formed between faceplate 509 and plate 523.Spacer 510 may maintain the two devices electrically isolated from oneanother in order to allow a plasma field to be formed. Faceplate 509 maybe electrically charged while plate 523 may be grounded or DC biased toproduce a plasma field within the region defined between the plates. Theplates may additionally be coated or seasoned in order to minimize thedegradation of the components between which the plasma may be formed.The plates may additionally include compositions that may be less likelyto degrade or be affected including ceramics, metal oxides, or otherconductive materials.

Operating a conventional capacitively-coupled plasma (“CCP”) may degradethe chamber components, which may remove particles that may beinadvertently distributed on a substrate. Such particles may affectperformance of devices formed from these substrates due to the metalparticles that may provide short-circuiting across semiconductorsubstrates. However, the CCP of the disclosed technology may be operatedat reduced or substantially reduced power in embodiments, and may beutilized to maintain the plasma, instead of ionizing species within theplasma region. In other embodiments the CCP may be operated to ionizeprecursors delivered into the region. For example, the CCP may beoperated at a power level below or about 1 kW, 500 W, 250 W, 100 W, 50W, 20 W, etc. or less. Moreover, the CCP may produce a flat plasmaprofile which may provide a uniform plasma distribution within thespace. As such, a more uniform flow of plasma effluents may be delivereddownstream to the processing region of the chamber.

The chamber of system 500 may also include an additional plasma sourcewithin the chamber housing. For example, plasma source 550 may be aninductively-coupled plasma (“ICP”) source in embodiments. Asillustrated, the ICP source 550 may be included between the gasdistribution assembly 525 and the pedestal 565. The ICP source 550 maybe positioned above the processing region 533, and may at leastpartially define the processing region 533 from above. The ICP sourcemay include a combination of materials in embodiments, or may be asingle material design. As a combination, ICP source 550 may include aconductive material 554 that is included within a dielectric material552, or contained or housed within the dielectric material 552. Inembodiments the dielectric material 552 may include any number ofdielectric or insulative materials. For example, dielectric material 552may be or include aluminum oxide, yttrium oxide, quartz, singlecrystalline silicon, or any other insulating material that may functionwithin the processing environment. Some materials may not operateeffectively as the dielectric material 552 in embodiments in which theICP source 550 is positioned near or partially defining the processingregion. Because the ICP source 550 may be exposed to one or moreprecursors or plasma effluents, the choice of material for thedielectric material 552 may be related to the precursors or operationsto which it will be exposed.

The conductive material 554 may be any conductive material that maycarry current. Conductive material 554 may include a solid material or ahollow material, such as a tube. By utilizing a tube, for example, afluid may be flowed through the hollow structure, which may aid incooling of the source under charge. In embodiments the conductivematerial 554 may be configured to receive a fluid flowed within thetube. The fluid may be water, for example, or may be any other fluidthat may not impede the function of the ICP source 550 during operation.The conductive material 554 may be any conductive material that mayoperate effectively at varying operating conditions. In one non-limitingexample, the conductive material 554 may be copper, including a coppertube, although other conductive materials such as other metals, orconductive non-metals may be used. Conductive material 554 may beincluded in a number of configurations as will be discussed below. Insome configurations, the conductive material may be a tube, which may bewound, spiraled, or coiled within the dielectric material 552, and thusmay be located throughout the dielectric material 552, including atoptional locations 558, for example. The conductive material 554 may beincluded in a relatively uniform or uniform configuration to produce auniform plasma across the ICP source 550, for example.

As previously noted, ICP source 550 may be positioned below the fluiddelivery sources, such as gas distribution assembly 525 as well as otherdiffusers, faceplates, or showerheads previously discussed. Whenpositioned above processing region 533, or proximate wafer 555, auniform flow of materials through ICP source 550 may be desired toprovide a uniform process across wafer 555. Thus, gas that has beendistributed through the chamber through other showerheads may be arelatively uniform distribution upon interacting with the ICP source550. Accordingly, ICP source 550 may operate as a showerhead or even asa final distributor before delivery into the processing region forcontact with the wafer 555. ICP source 550 may be configured to maintaina uniform or relatively uniform flow of precursors and/or plasmaeffluents through the chamber and into the processing region 533.Embodiments of ICP sources 550 may include apertures 556 defined in thedielectric material 552 and through the ICP source 550. Severalexemplary configurations are discussed in detail below. The aperturesmay be spaced apart from or around the conductive material 554 containedwithin the dielectric material 552. In some embodiments the direction ofthe apertures 556 may be perpendicular to the direction of theconductive material 554 within the dielectric material 552. For example,a central axis of any one or more of the apertures 556 may be normal toan axis of the conductive material 554, such as at an entrance to theICP source 550, or to the direction of fluid flow within the conductivematerial 554, or to a direction of a channel defined in the dielectricmaterial 552 in which the conductive material 554 may be seated.

A distance between ICP source 550 and gas distribution assembly 525 maybe maintained to prevent or reduce a plasma from generating between thetwo components. The gas distribution assembly 525 may be grounded insome embodiments, and thus with a charged ICP source 550, the gasdistribution assembly 525 may cause electromagnetic losses from the ICPsource 550. Accordingly, a farther distance between the two componentsmay be desired. However, as the components are spaced further apart, itmay be possible to strike a plasma within the region between the twocomponents. Accordingly, a distance between the two components may beless than or about 1 inch in embodiments to avoid striking a plasmabetween the two components. In some embodiments, the distance betweenthe two components may be less than or about 0.9 inches, less than orabout 0.8 inches, less than or about 0.7 inches, less than or about 0.6inches, less than or about 0.5 inches, less than or about 0.4 inches,less than or about 0.3 inches, less than or about 0.2 inches, less thanor about 0.1 inches, or less, although a distance may be maintainedbetween the two components to ensure uniformity of flow between the twocomponents which may have apertures that are axially aligned, or may bespecifically offset from each other.

By including an ICP source 550, such as illustrated, a lower voltage maybe produced than with a capacitively coupled plasma. In acapacitively-coupled plasma, the voltage induced on the electrodes maybe directly proportional to the power, and thus may generate highvoltages even at reduced power. For example, an exemplary capacitivesource may be operated at a relatively low power level of about 50 W andat a pressure of about 20 mTorr, but may induce a voltage of 300-400volts on the plates of the capacitive source. This may produce thesputtering previously discussed, for example. An inductively-coupledplasma source operated at the same frequency, such as ICP source 550,for example, may produce an induced voltage less than 300 volts forexample, and may be less than 250 volts, less than 200 volts, less than175 volts, less than 150 volts, less than 125 volts, less than 100volts, less than 90 volts, less than 80 volts, less than 70 volts, lessthan 60 volts, less than 50 volts, or less depending on the number ofturns and other parameters.

Additionally, utilizing ICP source 550 may provide an additionaladvantage over a capacitively-coupled source as discussed previouslywith respect to FIG. 2. FIG. 2 showed an exemplary chamber designaccording to the present technology in which a capacitively-coupledplasma was produced in region 270. A capacitively coupled plasma mayutilize two electrodes, which can include, for example a showerhead aswell as the wafer pedestal. Thus, ion density and ion energy at thewafer level are determined together. With an ICP source, the ion energyat the wafer level may be decoupled from the ion density of the plasma.For example, an ICP source may utilize an antenna to ionize gas, and maydetermine the ion density, which may be a function of power.Accordingly, an ICP source at a particular power may define the iondensity of the plasma produced. The system, however, may still includethe RF electrode in the pedestal, and may utilize a ground source, suchas chamber walls. By utilizing an RF electrode and electrical groundseparate from the antenna defining the ion density, the ion energy maybe controlled separately at the wafer level by this RF bias at the waferlevel. Accordingly, embodiments of the present design may provideadditional control and tuning over process activities by utilizing theICP source to determine ion density of the plasma, and then using an RFbias at the wafer or pedestal to control ion energy. Accordingly, thepresent system may produce a high density plasma, and also provide a lowenergy at the wafer level, for example, to perform intricate wafermodifications and ion etching.

Turning to FIG. 6 is shown a plan view of an exemplary ICP source 600according to embodiments of the present technology. As illustrated, ICPsource 600 may be or include a planar source in which a conductivematerial 610 is configured in a two-dimensional pattern, orsubstantially two-dimensional pattern, within a dielectric material 620.Conductive material 610 may enter dielectric material 620 at an exteriorregion of the dielectric material 620. Conductive material 610 mayfollow a pattern based on a channel at least partially defined within oracross a surface of the dielectric material 620. As illustrated,conductive material 610 may be configured in a planar coiled or spiralpattern within the dielectric material 620. ICP source 600 may includeany of the materials previously described and may be incorporated in anyof the exemplary chambers discussed previously or elsewhere in thedisclosure.

The spiral may be included to provide a number of turns of theconductive material 610. For example, in exemplary configurations thespiral may include at least about 1 turn, and may include at least orabout 2 turns, at least or about 3 turns, at least or about 4 turns, atleast or about 5 turns, at least or about 6 turns, at least or about 7turns, at least or about 8 turns or more turns depending, for example,on the size of the conductive material or dielectric material.Additionally, exemplary ICP sources may include between about 1 turn ofthe conductive material and about 7 turns of the conductive material, orbetween about 2 turns and about 4 turns. Portion 610 a of conductivematerial 610 may extend vertically within the dielectric material 620,and may extend normal to the planar coil or spiral configuration ofconductive material 610. As will be explained below, portion 610 a maystill be contained within the dielectric material 620 in embodiments.

The number of turns of the conductive material 610 or ICP coil mayimpact the power provided by the ICP source. For example, a highernumber of turns of the conductive material may provide an increasedpower to the plasma. However, as the number of turns continues toincrease, this advantage may begin to decrease. For example, as turnscontinue to increase, the coil may begin to compensate and induce aself-inductance, or effectively resisting itself. Accordingly, byreducing the turns below such a threshold, or minimizing the effect, aswell as providing enough turns for adequate power, a balance may beestablished to provide acceptable ICP sources. Additionally, theconfiguration of the conductive material 610 may be to include similarcoverage across the dielectric material 620 to provide a more uniformplasma profile through the ICP source.

ICP source 600 may also include apertures 630 defined through dielectricmaterial 620 as previously described. The apertures may be configured todevelop uniformity of a flow profile through the ICP source. In someembodiments the apertures 630 may be included in a uniform patternacross the dielectric material 620 and about the conductive material610. As illustrated, apertures 630 are included in a spiral or coiledpattern similar to conductive material 610. Because the apertures 630may perforate the dielectric material 620 to provide flow channels, theapertures may not be positioned in line with the conductive material.Although illustrated in a spiral pattern, the apertures may be includedin additional or alternative configurations that may include a goal ofproviding a substantially uniform flow profile through the ICP source.

Additionally, the number of apertures 630 may be variable, and may notbe adequately represented by the figure, which is included more for thepattern of apertures. The number of apertures in any pattern across theICP source 600 may be greater than or equal to 10 apertures, greaterthan or equal to 50 apertures, greater than or equal to 100 apertures,greater than or equal to 500 apertures, greater than or equal to 1,000apertures, greater than or equal to 5,000 apertures, greater than orequal to 10,000 apertures, or more depending on the size of ICP source600 and the dimensions of the apertures. The number of apertures mayalso be any smaller range within these ranges, or between any twonumbers included within these ranges. Similarly, the dimensions andgeometries of the apertures may be similar across the ICP source 600, ormay be different between apertures.

FIG. 7 shows a cross-sectional view of the exemplary ICP source 600 ofFIG. 6 according to embodiments of the present technology. Asillustrated, ICP source 600 may include a conductive material 610included within a dielectric material 620. Dielectric material 620 mayalso define apertures 630 through the ICP source 600, and the aperturesmay be positioned around or about the conductive material 610. Asillustrated, the cross-sectional view shows an embodiment of conductivematerial 610 as it both enters and exits dielectric material 620. Theconductive material 610 may be coupled with a power source, such as RFpower source 710 at one end of the conductive material, such as a coppertube. Additionally, the end of conductive material 610 exiting thedielectric material 620 may be coupled with electrical ground 720. Inother embodiments, the conductive material 610 may include multiplesections. In order to include the conductive material 610, FIG. 7illustrates that ICP source 600 may be thicker than one inch inembodiments, and may be between about 0.5 inches and about 3 inches inembodiments, or between about 1 inch and about 2 inches in embodiments.

FIG. 7 shows an additional view of conductive material portion 610 a,which may extend normal to the coiled configuration of conductivematerial. As illustrated, portion 610 a of conductive material mayextend vertically and then exit the dielectric material 620 with section610 b. Section 610 b is illustrated as hidden, as it may not be in linewith the portion entering the dielectric material 620, and may notintersect any of apertures 630. As illustrated, the conductive material610 may be completely enclosed within the dielectric material 620,except for stub portions extending from the chamber in which the sourcemay be located and may be coupled with electrical sources. Toincorporate the conductive material 610 within the dielectric material620, the dielectric material may be cast about the conductive material,for example.

In another embodiment, the dielectric material may include a pluralityof plates that each may include a portion of conductive material 610.For example, the dielectric material may include at least two platescoupled together, such as is illustrated with optional plate divisions640, 650. As illustrated, the ICP source includes 3 plates, althoughadditional sources may include 1 or 2 plates as well as more than 3plates, for example. Each plate of dielectric material 620 may define atleast a portion of a channel in which the conductive material may beseated in embodiments. The conductive material may then be positioned orseated within at least one plate, and then a second or additional platesmay be coupled with the first plate to enclose or house the conductivematerial within the dielectric material 620 plates, and within thechannel at least partially defined by each of the plates. Althoughillustrated as having the planar configuration of the conductivematerial within a lower plate or at a lower portion of dielectricmaterial 620, it is to be understood that the configuration can bereversed, with the coil pattern at an upper portion of the dielectricmaterial, and the portion 610 a extending vertically down from thecoiled portion before exiting the dielectric material 620.

FIG. 8 shows a plan view of another exemplary plasma source 800according to embodiments of the present technology. Plasma source 800may include some or all of the components or characteristics previouslydiscussed. As illustrated, plasma source 800 may include a conductivematerial 810 included in dielectric or insulative material 820, aspreviously described. Plasma source 800 may include any of the materialsor configurations previously described and may be incorporated in any ofthe exemplary chambers discussed previously or elsewhere in thisdisclosure. Dielectric material 820 may additionally define a number ofapertures 830 through plasma source 800, which may be positioned aboutor around the conductive material 810. The aperture configuration isonly exemplary, and adjustments with the number, size, shape, andlocation of apertures will be understood to be encompassed as well. Theconductive material 810 may be in a fully planar configuration asillustrated in FIG. 8, and may not include a portion extending above orbelow the planar configuration as was illustrated, for example, in FIGS.6-7. In some embodiments, the dielectric material 820 may also includetwo dielectric plates coupled with one another that each define at leasta portion of a channel in which the conductive material may be seated.

FIG. 9 shows a plan view of another exemplary plasma source 900according to embodiments of the present technology. Plasma source 900may include any of the materials or configurations previously describedand may be incorporated in any of the exemplary chambers discussedpreviously or elsewhere in this disclosure. Plasma source 900 mayinclude two conductive materials, such as conductive tubes, positionedwithin the plasma source. As illustrated, plasma source 900 may includetwo conductive materials 910, 940 included within dielectric material920. The configuration may include a first tube 910 disposed in a firstconfiguration within dielectric material 920. Additionally, plasmasource 900 may include a second tube 940 disposed in a secondconfiguration within dielectric material 920. The second configuration,which may include the looped portion of second tube 940, may be radiallyinward of the first configuration, or coiled portion, of conductive tube910 within the dielectric material 920, or within the plasma source 900.Plasma source 900 may also include apertures 930 defined within thedielectric material 920. Apertures 930 may include any pattern aspreviously discussed, and may include differently sized apertures, suchas smaller apertures 930 a and larger apertures 930 b distributed acrossthe plasma source 900. The configuration may allow improvements inuniformity of delivery of precursors through the plasma source 900, forexample.

As illustrated, the first tube 910 and the second tube 940, as well asthe first configuration and the second configuration of the tubes orother conductive material, may be planar configurations. In embodiments,the first configuration and the second configuration may be within thesame plane across dielectric material 920. Accordingly, the dielectricmaterial may define at least a portion of a first channel and at least aportion of a second channel in which the two conductive materials may beseated. In other embodiments, the first configuration or first tube 910may be on different plane of dielectric material 920 than the secondconfiguration or second tube 940. For example, first tube 910 may bedisposed vertically offset within dielectric material 920 from secondtube 940.

When vertically offset, for example, the dielectric material may includethree plates that each define at least a portion of a channel in whicheither first tube 910 or second tube 940 may be seated. A middle plate,for example, may define at least a portion of a channel in which firsttube 910 is seated on a first surface of the middle plate. Additionally,the middle plate may define at least a portion of a channel in whichsecond tube 940 is seated on a second surface of the middle plate thatmay be opposite the first surface. In embodiments, the first tube 910may be covered by a first portion of dielectric material 920, and thesecond tube 940 may be covered by a second portion of dielectricmaterial 920. The two portions of dielectric material may then becoupled with one another to provide the plasma source 900. In thisexample or any example discussed throughout the disclosure in whichmultiple plates may be utilized for the plasma source, the apertures maybe at least partially defined through each plate of dielectric material.When coupled together, the apertures may be axially aligned.

In exemplary configurations in which two separate conductive materialsor tubes are included within a dielectric material, such as with firsttube 910 and second tube 940 of plasma source 900, the two materials maybe individually coupled with power supplies. For example, first tube 910may be coupled with a first RF source, and second tube 940 may becoupled with a second RF source. Additionally, the two tubes may becoupled to an RF source together. In some embodiments, the first tubeand second tube may be coupled to an RF source through a capacitivedivider. A capacitive divider may allow management of the ratio ofenergy delivered to the plasma between the two tubes by adjusting thepower delivered to each of the tubes. This may allow control of theplasma density distribution. For example, tunable capacitance may allowdistributions of power of 50%/50%, 40%/60%, 30%/70%, 20%/80% between thetwo coils, which may also then be reversed between the two coils, or anyother distribution of power as would be understood to be encompassed bythis configuration. Generally, whether coupled with separate RF sourcesoperating at similar or different power levels, or an RF power with acapacitive divider, utilizing two coils may allow tuning of the plasmato adjust for uniformity of treatment operations and plasmadistribution.

Turning to FIG. 10 is shown a cross-sectional view of a processingchamber 1000 according to embodiments of the present technology. Chamber1000 may include some or all of the components, materials, orconfigurations of chamber 200 and/or the chamber of system 500 discussedpreviously. For example, chamber 1000 may include a lid 1002 includingan inlet 1001. Chamber 1000 may define an interior region that may bepartitioned by one or more components within the chamber, such as toprovide processing region 1033 in which a substrate 1055 may bepositioned on a pedestal 1065. Processing region 1033 may include aliner 1035 such as previously discussed. Chamber 1000 may include afaceplate 1009 defining apertures 1007. Faceplate 1009 and lid 1002 maydefine a mixing region 1011 in which one or more precursors delivered tothe chamber may be incorporated. Chamber 1000 may also include plate1023 defining apertures 1024. In embodiments plate 1023 may beconfigured as an ion suppressor as previously discussed. A dielectricspacer 1010 may be positioned between faceplate 1009 and plate 1023. RFpower may be coupled or coupleable with faceplate 1009, while plate 1023may be coupled or coupleable with electrical ground. In embodiments,such a configuration may allow a capacitively-coupled plasma to beproduced between the faceplate 1009 and the plate 1023 in region 1015.

Chamber 1000 may also include a showerhead or gas distribution assembly1025. Gas distribution assembly 1025 may include an upper plate and alower plate, which may be coupled with one another to define a volume1027 between the plates. The coupling of the plates may be such as toprovide first fluid channels 1040 through the upper and lower plates,and second fluid channels 1045 through the lower plate. The formedchannels may be configured to provide fluid access from the volume 1027through the lower plate, and the first fluid channels 1040 may befluidly isolated from the volume 1027 between the plates and the secondfluid channels 1045. In embodiments, gas distribution assembly 1025 mayalso include an embedded heater or heating element 1029.

Chamber 1000 may also include an additional plasma source, such as aninductively-coupled plasma (“ICP”) source 1050. ICP source 1050 mayinclude any of the features or characteristics of other plasma sourcesdescribed elsewhere in this description. ICP source 1050 may alsooperate similarly to any of the previously discussed plasma sources. ICPsource 1050 may include a dielectric material 1052 through whichapertures 1056 may be defined. ICP source 1050 may also include a firstconductive material 1054 and a second conductive material 1058 includedwithin the dielectric material 1052. The first conductive material 1054and second conductive material 1058 may be electrically coupled with RFpower in any of the configurations discussed previously includingseparate sources or a single source. The arrangement of apertures 1056about the conductive materials 1058 may be any of the configurations aspreviously discussed, or any other arrangement around the conductivematerials. ICP source 1050 may differ from some of the planar sourcespreviously described in that ICP source 1050 may include coiled orotherwise configured conductive material that may extend verticallywithin the dielectric material 1052. An exemplary configuration of anICP source 1050 is included below with respect to FIG. 11, and will bediscussed further with that figure.

FIG. 11 shows a plan view of an exemplary plasma source 1100 accordingto embodiments of the present technology. As illustrated, plasma source1100 may include a design having some similar features of any of thepreviously discussed designs, including FIG. 9 discussed above. Plasmasource 1100 may include a first conductive material 1110 included withindielectric material 1120. Plasma source 1100 may also include a secondconductive material 1140 included within dielectric material 1120.Plasma source 1100 may also include apertures 1130 defined throughoutthe source, which may include a variety of patterns and hole geometriesto provide a uniform flow, or a relatively or substantially uniform flowof precursors or plasma effluents through plasma source 1100.

First and second conductive materials 1110, 1140 may be included in acoiled or spiraled configuration within dielectric material 1120. Thecoils may extend vertically within dielectric material 1120 withoutintersecting one another. For example, the coiled configuration ofsecond conductive material 1140 may be radially inward of the coiledconfiguration of first conductive material 1110. The coils may eachextend vertically in a circular fashion or in some other curved geometryfor a number of turns. For example, first conductive material 1110 orsecond conductive material 1140 may each include at least about 1complete turn, as well as at least about 2 complete turns, at leastabout 3 complete turns, at least about 4 complete turns, between about 2complete turns and about 4 complete turns, or any other number of turnsbased on the spatial characteristics of the dielectric material andconductive material of the plasma source 1100.

In some embodiments the first conductive material 1110 and the secondconductive material 1140 may include or be characterized by the samenumber of turns. In some embodiments the first or second conductivematerials may include a different number of turns from one another.Additionally, in some embodiments, the first conductive material 1110may turn in the same direction as the second conductive material 1140,while in some embodiments the first conductive material 1110 and thesecond conductive material 1140 may turn in opposite directions from oneanother, such as a left-hand turn and a right-hand turn. By havingadditional turns compared to some planar configurations, plasma source1100 may provide additional plasma uniformity while providing the plasmatuning of two coils.

FIG. 12 shows a cross-sectional view of the exemplary plasma source ofFIG. 11 according to embodiments of the present technology. Asillustrated, plasma source 1100 may include a dielectric material 1120,which may include or encompass first conductive material 1110 and secondconductive material 1140. Dielectric material 1120 may include anynumber of plates that may each define at least a portion of a channelwithin which first conductive material 1110 or second conductivematerial 1140 may reside. The dielectric material, which may includeplates, may include any configuration previously described, or may beconfigured in additional variations that encompasses the conductivematerials. Depending on the number of turns of each conductive material,plasma source 1100 may be of a thickness of at least about 2 inches inembodiments to cover the conductive materials, and may be at least about3 inches, at least about 4 inches, at least about 5 inches, or greaterin embodiments.

Conductive material 1110 and conductive material 1140 are each shown toinclude 4 coils extending vertically within the dielectric material1120. The coils may be packed at any distance from adjacent coilsdepending on the number of coils made, the thickness of the conductivematerial, and the thickness of the dielectric material 1120. Asillustrated, first conductive material 1110 may include end portion 1112shown hidden, and second conductive material 1140 may include endportion 1142 shown hidden. The configuration or outlay of the tubes thatmay be the conductive materials may be horizontally disposed asillustrated. Because of the vertical extension of the conductivematerials, in embodiments the first conductive material 1110 and/or thesecond conductive material 1140 may also be vertically aligned at theentrance and exit of the dielectric material 1120. Additionally, thecoils of first conductive material 1110 may be spaced to allow theingress and egress of second conductive material 1140 between the coils.As illustrated, leads or inlet and exit portions of second conductivematerial 1140 may pass within the coils of first conductive material1110 without the conductive materials intersecting. The coiledconfiguration of second conductive material 1140 may then extend withinthe interior or radially inward of the coiled configuration of firstconductive material 1110.

FIG. 12 additionally illustrates some apertures 1130 as may be includedin cross section. For example, apertures 1130 a may be centrally locatedwithin plasma source 1100, while apertures 1130 b and 1130 c may beradially outward from a central region of the plasma source 1100. Aspreviously discussed, the apertures 1130 may be of a variety of sizesand geometries to assist in uniformity of flow through the plasma source1100.

The chambers and plasma sources described above may be used in one ormore methods. FIG. 13 shows operations of an exemplary method 1300according to embodiments of the present technology. The method mayinvolve operations in an ion etching operation in which radical speciesmay be directed to a surface of a wafer to etch or modify features onthe wafer. Method 1300 may include flowing a precursor into a chamber atoperation 1305. The chamber may be any of the chambers previouslydescribed, and may include one of the exemplary plasma sources, such asan ICP plasma source, as previously described. The precursor may be orinclude materials that may not chemically react with a surface of thewafer, and may include, for example, hydrogen, helium, argon, nitrogen,or some other precursor. The precursor may flow through the chamber tothe plasma source, such as one of the ICP sources, at operation 1310.The plasma source may receive power to produce a plasma through thesource, which may ionize the precursor at operation 1315 as theprecursor flows through apertures defined in the source. The source mayadditionally operate as a showerhead to maintain or assist uniform flowof the precursor before it contacts the wafer.

In some embodiments a source, such as any of the ICP sources discussed,may also maintain plasma effluents produced elsewhere. For example, theplasma sources as described may be used to generate a plasma that maytune or further enhance plasma effluents produced in acapacitively-coupled plasma upstream of the source, or in an externalsource, such as a remote plasma unit. In this way precursors that mayhave relatively short residence times, for example, may be maintained bythe ICP plasma of a source near a processing region or near the waferlevel.

In the preceding description, for the purposes of explanation, numerousdetails have been set forth in order to provide an understanding ofvarious embodiments of the present technology. It will be apparent toone skilled in the art, however, that certain embodiments may bepracticed without some of these details, or with additional details.

Having disclosed several embodiments, it will be recognized by those ofskill in the art that various modifications, alternative constructions,and equivalents may be used without departing from the spirit of theembodiments. Additionally, a number of well-known processes and elementshave not been described in order to avoid unnecessarily obscuring thepresent technology. Accordingly, the above description should not betaken as limiting the scope of the technology.

Where a range of values is provided, it is understood that eachintervening value, to the smallest fraction of the unit of the lowerlimit, unless the context clearly dictates otherwise, between the upperand lower limits of that range is also specifically disclosed. Anynarrower range between any stated values or unstated intervening valuesin a stated range and any other stated or intervening value in thatstated range is encompassed. The upper and lower limits of those smallerranges may independently be included or excluded in the range, and eachrange where either, neither, or both limits are included in the smallerranges is also encompassed within the technology, subject to anyspecifically excluded limit in the stated range. Where the stated rangeincludes one or both of the limits, ranges excluding either or both ofthose included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”,and “the” include plural references unless the context clearly dictatesotherwise. Thus, for example, reference to “a layer” includes aplurality of such layers, and reference to “the precursor” includesreference to one or more precursors and equivalents thereof known tothose skilled in the art, and so forth.

Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”,“include(s)”, and “including”, when used in this specification and inthe following claims, are intended to specify the presence of statedfeatures, integers, components, or operations, but they do not precludethe presence or addition of one or more other features, integers,components, operations, acts, or groups.

1. A semiconductor processing chamber comprising: a chamber housing atleast partially defining an interior region of the semiconductorprocessing chamber; a showerhead positioned within the chamber housing,wherein the showerhead at least partially divides the interior regioninto a remote region and a processing region in which a substrate can becontained; and an inductively coupled plasma source positioned betweenthe showerhead and the processing region, wherein the inductivelycoupled plasma source comprises a conductive material within adielectric material.
 2. The semiconductor processing chamber of claim 1,wherein the dielectric material is selected from the group consisting ofaluminum oxide, yttrium oxide, single crystalline silicon, and quartz.3. The semiconductor processing chamber of claim 1, wherein theconductive material comprises a copper tube configured to receive afluid flowed within the tube.
 4. The semiconductor processing chamber ofclaim 1, wherein the dielectric material defines apertures through theinductively coupled plasma source, and wherein the conductive materialis positioned about the apertures within the dielectric material.
 5. Thesemiconductor processing chamber of claim 1, wherein the apertures areincluded in a uniform pattern across the dielectric material and aboutthe conductive material.
 6. The semiconductor processing chamber ofclaim 1, wherein the conductive material is configured in a planarspiral pattern within the dielectric material.
 7. The semiconductorprocessing chamber of claim 1, wherein the conductive material isconfigured in a coil extending vertically within the dielectric materialfor at least two complete turns of the conductive material.
 8. Thesemiconductor processing chamber of claim 1, wherein the conductivematerial comprises two conductive tubes positioned within theinductively coupled source.
 9. The semiconductor processing chamber ofclaim 8, wherein a first tube is included in a first configurationwithin the inductively coupled source, wherein a second tube is includedin a second configuration within the inductively coupled source, andwherein the second configuration is radially inward of the firstconfiguration.
 10. The semiconductor processing chamber of claim 9,wherein the first configuration and the second configuration are eachcoiled configurations extending vertically within the dielectricmaterial.
 11. The semiconductor processing chamber of claim 9, whereinthe first configuration and the second configuration are each a planarconfiguration within the same plane of the inductively coupled source.12. The semiconductor processing chamber of claim 9, wherein the firsttube and the second tube are coupled with an RF source.
 13. Thesemiconductor processing chamber of claim 12, wherein the first tube andthe second tube are each coupled with the RF source through a capacitivedivider.
 14. The semiconductor processing chamber of claim 1, whereinthe inductively coupled source comprises at least two plates coupledtogether, wherein each plate defines at least a portion of a channel,and wherein the conductive material is housed within the channel atleast partially defined by each of the at least two plates.
 15. Aninductively coupled plasma source comprising: a first plate defining atleast a portion of a first channel and at least a portion of a secondchannel within the first plate, wherein the first plate comprises adielectric material; a first conductive material seated within the atleast a portion of the first channel; and a second conductive materialseated within the at least a portion of the second channel, wherein eachof the first conductive material and the second conductive material ischaracterized by a spiral or coil configuration, and wherein each of thefirst conductive material and the second conductive material is coupledwith an RF source.
 16. The inductively coupled plasma source of claim15, wherein the first plate defines apertures through the first plate,and wherein a central axis of each aperture is normal to the at least aportion of the channel.
 17. The inductively coupled plasma source ofclaim 15, wherein the source comprises a thickness of at least threeinches.
 18. (canceled)
 19. The inductively coupled plasma source ofclaim 15, further comprising a second plate coupled with the first plateenclosing the conductive material between the first plate and the secondplate, wherein the second plate defines second apertures axially alignedwith the apertures defined through the first plate.
 20. A semiconductorprocessing chamber comprising: a chamber housing at least partiallydefining an interior region of the semiconductor processing chamber,wherein the chamber housing includes a lid assembly including an inletfor receiving precursors into the semiconductor processing chamber; apedestal within the interior region of the semiconductor processingchamber; a showerhead positioned within the chamber housing, wherein theshowerhead is positioned between the lid assembly and the pedestal; aninductively coupled plasma source positioned between the showerhead andthe pedestal, wherein the inductively coupled plasma source comprises aconductive material within a dielectric material.